Central Semiconductor Corp. MOSFET CMLDM8120 BK

Description
MOSFET 20V P-Ch FET 8.0Vgs 860mA 360mA 350mW
Description
MOSFET 20V P-Ch FET 8.0Vgs 860mA 360mA 350mW
Datasheet
Datasheet Summary
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CMLDM8120 is a P-channel enhancement-mode MOSFET in a SOT-563 package, designed for high-speed pulsed amplifier and driver applications. It has a drain-source voltage rating of 20 V, a gate-source voltage rating of 8.0 V, and a continuous drain current of 860 mA. The device features a low on-resistance of 0.085 Ω at VGS=4.5 V and ID=0.95 A, and a threshold voltage range of 0.45 V to 1.0 V. Power dissipation is rated at 350 mW on a ceramic or aluminum core PCB with a 4.0 mm⁲ copper pad. The SOT-563 package has six pins, with drain connections on pins 1, 2, 5, and 6, gate on pin 3, and source on pin 4. The part is halogen-free by design and operates over a junction temperature range of -65 °C to +150 °C.

Datasheet Summary
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CMLDM8120 is a P-channel enhancement-mode MOSFET in a SOT-563 package, designed for high-speed pulsed amplifier and driver applications. It has a drain-source voltage rating of 20 V, a gate-source voltage rating of 8.0 V, and a continuous drain current of 860 mA. The device features a low on-resistance of 0.085 Ω at VGS=4.5 V and ID=0.95 A, and a threshold voltage range of 0.45 V to 1.0 V. Power dissipation is rated at 350 mW on a ceramic or aluminum core PCB with a 4.0 mm⁲ copper pad. The SOT-563 package has six pins, with drain connections on pins 1, 2, 5, and 6, gate on pin 3, and source on pin 4. The part is halogen-free by design and operates over a junction temperature range of -65 °C to +150 °C.

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Sheung Wan, Hong Kong
MOSFET 20V P-Ch FET 8.0Vgs 860mA 360mA 350mW

MOSFET 20V P-Ch FET 8.0Vgs 860mA 360mA 350mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CMLDM8120 BK
Product Name MOSFET
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