Central Semiconductor Corp. MOSFET CMLDM7003TG TR

The CMLDM7003TG is a dual N-channel enhancement-mode MOSFET in an SOT-563 package, designed for high-speed pulsed amplifier and driver applications. It has a drain-source voltage rating of 50 V, a continuous drain current of 280 mA, and a maximum pulsed drain current of 1.5 A. Power dissipation is rated at 350 mW on a ceramic or aluminum core PCB, 300 mW on an FR-4 PCB with a 4.0 mm² copper pad, and 150 mW on an FR-4 PCB with a 1.4 mm² copper pad. The device features low on-resistance, with rDS(ON) ranging from 1.1 Ω to 2.3 Ω depending on gate voltage, and gate-source threshold voltage between 0.7 V and 1.2 V. ESD protection is rated up to 2 kV. The operating and storage junction temperature range is -65 °C to +150 °C. The package is halogen-free by design.