Central Semiconductor Corp. MOSFET CEDM8001 BK

The CEDM8001 is a P-channel enhancement-mode MOSFET designed for high-speed pulsed amplifier and driver applications, featuring low rDS(ON) and low threshold voltage. It is housed in a SOT-883L surface-mount package measuring 1.05 mm in length, 0.65 mm in width, and 0.40 mm in height. The device has a drain-source voltage rating of 20 V, a continuous drain current of 100 mA, and a power dissipation of 100 mW. Its gate-source voltage is rated up to 10 V, with a threshold voltage range of 0.6 to 1.1 V. The on-resistance is 1.9 to 8.0 Ω at VGS=4.0 V and ID=10 mA, and 2.4 to 12 Ω at VGS=2.5 V and ID=10 mA. Operating and storage junction temperatures range from -65 °C to +150 °C.