Central Semiconductor Corp. Single FETs, MOSFETs CDMSJ22010-650 SL

The CDMSJ22010-650 is a 10 A, 650 V N-channel super junction MOSFET in a TO-220FP package, designed for high-voltage switching applications such as power factor correction and adapters. It has a maximum drain-source voltage of 650 V, a continuous drain current of 10 A at 25°C, and a typical on-resistance of 390 mΩ at 10 V gate drive. The gate charge is 19 nC, with a gate-source charge of 4 nC. The device operates from -55°C to +150°C junction temperature and dissipates up to 29.5 W at 25°C case temperature. It meets RoHS standards and is marked as CDMSJ10-650. The pin configuration lists Gate, Drain, and Source on pins 1, 2, and 3 respectively.