Central Semiconductor Corp. Single FETs, MOSFETs CDMS24780-170 SL

The CDMS24780-170 is an N-channel silicon carbide MOSFET in a TO-247 package, designed for high-speed switching and fast reverse recovery applications. It has a drain-source voltage rating of 1700 V, a continuous drain current of 18 A, and a maximum junction temperature of 175 °C. The device features a typical on-resistance of 80 mΩ at VGS = 15 V and ID = 10 A, with gate-source voltage rating of 20 V. Power dissipation is rated at 28 W. The TO-247 case has a device mass of approximately 6.2 g with a ±10% fluctuation margin. The molding compound is halogen-free, and the part is available in either lead-free or tin/lead plating. It complies with RoHS and is packaged in bulk or antistatic sleeves.