Central Semiconductor Corp. MOSFET CDM22010-650 SL

The CDM22010-650 is an N-channel power MOSFET in a TO-220 package designed for high-voltage switching applications such as power factor correction and inverters. It has a drain-source voltage rating of 650 V, a continuous drain current of 10 A, and a maximum pulsed drain current of 40 A. The device features a low on-resistance of 0.88 Ω at 10 V gate drive, a low gate charge of 8.0 nC, and a single pulse avalanche energy rating of 608 mJ. The thermal resistance from junction to case is 0.8 °C/W, and the operating junction temperature range is -55 °C to +150 °C. The TO-220 package has pins configured as Gate, Drain, and Source, with the tab connected to the Drain.