Central Semiconductor Corp. Bipolar Transistors - BJT BC857BR BK

Description
Bipolar Transistors - BJT 50V PNP 45Vceo 5.0Vebo 100mA 350mW
Description
Bipolar Transistors - BJT 50V PNP 45Vceo 5.0Vebo 100mA 350mW
Datasheet
Datasheet Summary
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The BC857BR BK is a PNP silicon transistor in an SOT-23 surface mount package, rated for a collector-emitter voltage of 45 V, collector-base voltage of 50 V, and emitter-base voltage of 5.0 V. It supports a continuous collector current of 100 mA and a peak collector current of 200 mA, with a power dissipation of 350 mW. The junction temperature range is -65 to +150°C, and thermal resistance is 357 °C/W. Current gain (hFE) ranges from 220 to 475 at VCE=5.0 V and IC=2.0 mA. It meets RoHS compliance and is designed for general purpose switching and amplifier applications.

Datasheet Summary
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The BC857BR BK is a PNP silicon transistor in an SOT-23 surface mount package, rated for a collector-emitter voltage of 45 V, collector-base voltage of 50 V, and emitter-base voltage of 5.0 V. It supports a continuous collector current of 100 mA and a peak collector current of 200 mA, with a power dissipation of 350 mW. The junction temperature range is -65 to +150°C, and thermal resistance is 357 °C/W. Current gain (hFE) ranges from 220 to 475 at VCE=5.0 V and IC=2.0 mA. It meets RoHS compliance and is designed for general purpose switching and amplifier applications.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC857BR BK
Bipolar Transistors - BJT BC857BR BK
Bipolar Transistors - BJT 50V PNP 45Vceo 5.0Vebo 100mA 350mW

Bipolar Transistors - BJT 50V PNP 45Vceo 5.0Vebo 100mA 350mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BC857BR BK
Product Name Bipolar Transistors - BJT
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