Central Semiconductor Corp. Single Bipolar Transistors BC212B TIN/LEAD

The BC212B is a silicon PNP transistor in a TO-92 package designed for low-noise, high-gain amplifier applications. It has a maximum collector-emitter voltage of 50 V, a continuous collector current of 200 mA, and a power dissipation of 300 mW. The device features a minimum current gain (hFE) of 200 at a collector current of 2.0 mA and a collector-emitter voltage of 5.0 V. The transition frequency is 200 MHz, and the collector-base capacitance is 6.0 pF. The operating and storage junction temperature range is -65 °C to +150 °C. Thermal resistance is 416 °C/W. Marking includes the full part number, and the pinout is collector, base, emitter from left to right when viewing the flat side with leads down.