The BC212B is a silicon PNP transistor designed for low noise, high gain amplifier applications in a TO-92 package. It has a maximum collector-emitter voltage of 50 V, a continuous collector current of 200 mA, and a power dissipation of 300 mW. The current gain (hFE) ranges from 200 to 400 at VCE=5.0 V and IC=2.0 mA. The transition frequency is 200 MHz, and the collector-base capacitance is 6.0 pF at VCB=10 V. The operating and storage junction temperature ranges from -65 °C to +150 °C. The transistor has a thermal resistance of 416 °C/W. The part number BC212B PBFREE indicates a lead-free plating option, which is an ordering suffix not detailed in the electrical or mechanical specifications.
Bipolar (BJT) Transistor PNP 50V 200mA 200MHz 300mW Through Hole TO-92
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1514-BC212BPBFREE-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |