Central Semiconductor Corp. Bipolar Transistors - BJT BC107B

The BC107B is an NPN silicon transistor for general-purpose amplifier applications, housed in a TO-18 case. It has a collector-base voltage rating of 50 V, a collector-emitter voltage of 45 V, and an emitter-base voltage of 6.0 V. The continuous collector current is 200 mA, with a power dissipation of 600 mW. The DC current gain (hFE) at VCE=5.0 V and IC=2.0 mA ranges from 200 to 450. The transition frequency (fT) is 150 MHz at VCE=5.0 V and IC=10 mA, with a collector output capacitance (Cob) of 4.5 pF at VCB=10 V. The operating and storage junction temperature range is -65 to +200 °C, and thermal resistance is 175 °C/W.