Central Semiconductor Corp. Bipolar Transistors - BJT 2N708

2N708 is an NPN silicon transistor in a TO-18 case, designed for saturated switching applications. It has a collector-emitter breakdown voltage of 15 V, a collector-base breakdown voltage of 40 V, and an emitter-base voltage of 5.0 V. The maximum collector current is 10 mA with a current gain (hFE) ranging from 20 to 120 at 10 mA collector current and 1.0 V collector-emitter voltage. The saturated voltage at 10 mA collector current is 0.4 V. Collector cutoff current is 0.025 mA at 20 V, and output capacitance is 10 pF. The transition frequency is 400 MHz, with turn-on and turn-off times of 40 ns and 70 ns respectively.