Central Semiconductor Corp. Single Bipolar Transistors 2N6076 APM TIN/LEAD

The 2N6076 is a PNP silicon transistor in a TO-92 package, designed for general-purpose applications. It has a collector-base voltage rating of 25 V, a collector-emitter voltage rating of 25 V, and a continuous collector current of 100 mA. Power dissipation is rated at 625 mW. The operating and storage junction temperature ranges from -65 to +150 °C. Current gain (hFE) ranges from 100 to 500 at a collector current of 10 mA and a collector-emitter voltage of 10 V. The transition frequency is 200 MHz. The transistor exhibits a collector-emitter saturation voltage of 0.25 V at 10 mA collector current and 1 mA base current, and a base-emitter saturation voltage of 0.80 V under the same conditions.