Central Semiconductor Corp. Bipolar Transistors - BJT 2N6029

The 2N6029 is a PNP silicon power transistor in a TO-3 case, designed for high voltage and high power amplifier applications. It has a collector-base voltage rating of 120 V, a collector-emitter voltage rating of 120 V, and a continuous collector current of 16 A. The device dissipates up to 200 W with a thermal resistance of 0.875 °C/W. The operating and storage junction temperature ranges from -65 °C to +200 °C. Saturation voltage is 2.0 V at a collector current of 16 A and base current of 4.0 A. Current gain (hFE) ranges from 20 to 80 at a collector current of 8.0 A and collector-emitter voltage of 2.0 V. The transition frequency is 1.0 MHz. The package defines the base as lead 1, emitter as lead 2, and case as collector.