Central Semiconductor Corp. Single Bipolar Transistors 2N5323 TIN/LEAD

The 2N5323 is a PNP silicon switching transistor in a TO-39 package, rated for a collector-emitter voltage of 50 V, a continuous collector current of 2.0 A, and a power dissipation of 10 W. It has a collector-base voltage of 75 V, an emitter-base voltage of 5.0 V, and a maximum junction temperature of 200 °C. Thermal resistance is 17.5 °C/W from junction to case and 175 °C/W from junction to ambient. Saturation voltage at 500 mA collector current and 50 mA base current is up to 1.2 V, with a minimum hFE of 40 at 500 mA and 2.0 V collector-emitter bias. Turn-on time is 100 ns and turn-off time is 1.0 µs under specified test conditions. The device complies with RoHS when ordered with the PBFREE suffix; the TIN/LEAD variant indicates a lead-tin plating option.