The 2N5322 is a PNP silicon switching transistor in a TO-39 package, designed for amplifier and switching applications. It has a collector-emitter voltage rating of 75 V, a continuous collector current of 2.0 A, and a power dissipation of 10 W. The device features a thermal resistance from junction to case of 17.5 °C/W and an operating junction temperature range of -65 to +200 °C. Switching characteristics include a turn-on time of up to 100 ns and a turn-off time of up to 1.0 μs under specified test conditions. The transistor has a DC current gain (hFE) of 40 to 250 at IC = 500 mA and VCE = 4.0 V, with a collector-emitter saturation voltage of up to 0.7 V at IC = 500 mA and IB = 50 mA. It is RoHS compliant when ordered with the PBFREE suffix.
Bipolar (BJT) Transistor PNP 75V 2A 50MHz 10W Through Hole TO-39
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1514-2N5322PBFREE-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |