Central Semiconductor Corp. Bipolar Transistors - BJT 2N4398

Description
Bipolar Transistors - BJT PNP Power SW
Description
Bipolar Transistors - BJT PNP Power SW
Datasheet
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The 2N4398 is an NPN power transistor in a TO-3 case with a maximum collector current of 30 A, a power dissipation of 200 W, a collector-emitter voltage rating of 40 V, and a collector-base voltage rating of 40 V. The minimum DC current gain (hFE) is 15 at a collector current of 15 A. The collector-emitter saturation voltage is 4.0 V at a collector current of 30 A and a base current of 15 A. The transition frequency is 4.0 MHz.

Datasheet Summary
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The 2N4398 is an NPN power transistor in a TO-3 case with a maximum collector current of 30 A, a power dissipation of 200 W, a collector-emitter voltage rating of 40 V, and a collector-base voltage rating of 40 V. The minimum DC current gain (hFE) is 15 at a collector current of 15 A. The collector-emitter saturation voltage is 4.0 V at a collector current of 30 A and a base current of 15 A. The transition frequency is 4.0 MHz.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N4398
Bipolar Transistors - BJT 2N4398
Bipolar Transistors - BJT PNP Power SW

Bipolar Transistors - BJT PNP Power SW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N4398
Product Name Bipolar Transistors - BJT
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