Central Semiconductor Corp. Bipolar Transistors - BJT 2N3740A

The 2N3740A is a silicon PNP power transistor in a TO-66 package, designed for power amplifier and medium speed switching applications. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 60 V, an emitter-base voltage rating of 7.0 V, a continuous collector current of 4.0 A, and a power dissipation of 25 W. The operating and storage junction temperature range is -65 to +200 °C. The device meets a collector-emitter cutoff current of 1.0 μA at VCE=40 V and a base-emitter cutoff current of 100 nA at VEB=7.0 V, distinguishing it from non-A variants. The minimum DC current gain (hFE) is 30 at IC=250 mA and VCE=1.0 V. The transition frequency (fT) is 4.0 MHz at IC=100 mA and VCE=10 V. The collector-emitter saturation voltage is 0.6 V at IC=1.0 A and IB=125 mA. The package is identified as TO-66, with full part number marking.