Central Semiconductor Corp. Single Bipolar Transistors 2N3391A APM PBFREE

The 2N3391A is a silicon NPN transistor in a TO-92 package designed for general purpose amplifier applications. It has a collector-base voltage rating of 25 V, a collector-emitter voltage rating of 25 V, a continuous collector current of 500 mA, and a power dissipation of 625 mW. The operating and storage junction temperature ranges from -65 to +150°C, with a thermal resistance of 200°C/W. The current gain (hFE) at VCE=4.5V and IC=2.0mA ranges from 250 to 500. The emitter-base voltage is 5.0 V, and the collector-base leakage current is 100 nA at VCB=18V. The output capacitance is 2.0 to 10 pF at VCB=10V and f=1.0MHz. Noise figure is 5.0 dB for the 2N3391A under specified conditions.