Bruckewell Technology Co., Ltd. Transistors MSHM60P14

Description

60V 14A 34.7W 70mΩ@10V,12A 2.5V@250μA 1 Piece P-Channel DFN-8(3.3x3.3) MOSFETs ROHS

ODG (Origin Data Global)

Description

60V 14A 34.7W 70mΩ@10V,12A 2.5V@250μA 1 Piece P-Channel DFN-8(3.3x3.3) MOSFETs ROHS

Suppliers

Company

Product

Description

Supplier Links

ODG (Origin Data Global)

Shenzhen, China

Transistors
MSHM60P14

Transistors MSHM60P14

60V 14A 34.7W 70mΩ@10V,12A 2.5V@250μA 1 Piece P-Channel DFN-8(3.3x3.3) MOSFETs ROHS

Supplier's Site

Technical Specifications

	ODG (Origin Data Global)
Product Category	Transistors
Product Number	MSHM60P14
Product Name	Transistors

Unlock Full Specs

to access all available technical data

Similar Products

Fuji Electric Corp. of America

Igbt, Module, Dual N Channel, 1.2Kv, 1.2Ka; Continuous Collector Current Fuji Electric

2MBI900VXA-120P-50

Specs

Transistor Type IGBT

Polarity N-Channel

Package Type TO-3

View Details

Nexperia B.V.

SMD 60V 0.3A SOT-23 MOSFET Transistor

2N7002CK,215

Specs

Transistor Type MOSFET

View Details

6 suppliers

Infineon Technologies AG

Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMZHN120R080M1T

AIMZHN120R080M1T

Specs

Transistor Type MOSFET

Polarity N-Channel; N

Transistor Technology / Material Silicon carbide

View Details

Allen-Bradley / Rockwell Automation

502A IGBT MODULE FOR ONE PHASE 600/690V

SK-H1-QOUT-E502

Specs

Transistor Type IGBT

View Details