Broadcom Inc. 1.5 µm DFB Chip in TO-can for Uncooled Applications, CWDM TO295Jxxx

Description
The Avago TO295Jxxx is an hermetic sealed TO can device with integral photo diode for optical output monitoring using 1550nm single mode edge-emitting laser diode chip for use in uncooled applications up to 2.7Gb/sec. It supports CWDM wavelengths from 1470 to 1610nm. The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.
Description
The Avago TO295Jxxx is an hermetic sealed TO can device with integral photo diode for optical output monitoring using 1550nm single mode edge-emitting laser diode chip for use in uncooled applications up to 2.7Gb/sec. It supports CWDM wavelengths from 1470 to 1610nm. The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.

Suppliers

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1.5 µm DFB Chip in TO-can for Uncooled Applications, CWDM - TO295Jxxx - Broadcom Inc.
San Jose, CA, USA
1.5 µm DFB Chip in TO-can for Uncooled Applications, CWDM
TO295Jxxx
1.5 µm DFB Chip in TO-can for Uncooled Applications, CWDM TO295Jxxx
The Avago TO295Jxxx is an hermetic sealed TO can device with integral photo diode for optical output monitoring using 1550nm single mode edge-emitting laser diode chip for use in uncooled applications up to 2.7Gb/sec. It supports CWDM wavelengths from 1470 to 1610nm. The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.

The Avago TO295Jxxx is an hermetic sealed TO can device with integral photo diode for optical output monitoring using 1550nm single mode edge-emitting laser diode chip for use in uncooled applications up to 2.7Gb/sec. It supports CWDM wavelengths from 1470 to 1610nm. The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.

Supplier's Site

Technical Specifications

  Broadcom Inc.
Product Category Diode Lasers
Product Number TO295Jxxx
Product Name 1.5 µm DFB Chip in TO-can for Uncooled Applications, CWDM
Laser Type Laser Diodes
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