Broadcom Inc. 1.49 µm DFB Chip in TO-can for FTTx Applications TO295J149x

Description
The Avago TO295J149x is an hermetic sealed TO can device with integral photo diode for optical output monitoring using 1490nm single mode edge-emitting laser diode chip for use in uncooled applications up to 2.7Gb/sec. It supports 1490nm transmission for use in passive optical networks (PON). The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.
Description
The Avago TO295J149x is an hermetic sealed TO can device with integral photo diode for optical output monitoring using 1490nm single mode edge-emitting laser diode chip for use in uncooled applications up to 2.7Gb/sec. It supports 1490nm transmission for use in passive optical networks (PON). The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.

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1.49 µm DFB Chip in TO-can for FTTx Applications - TO295J149x - Broadcom Inc.
San Jose, CA, USA
1.49 µm DFB Chip in TO-can for FTTx Applications
TO295J149x
1.49 µm DFB Chip in TO-can for FTTx Applications TO295J149x
The Avago TO295J149x is an hermetic sealed TO can device with integral photo diode for optical output monitoring using 1490nm single mode edge-emitting laser diode chip for use in uncooled applications up to 2.7Gb/sec. It supports 1490nm transmission for use in passive optical networks (PON). The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.

The Avago TO295J149x is an hermetic sealed TO can device with integral photo diode for optical output monitoring using 1490nm single mode edge-emitting laser diode chip for use in uncooled applications up to 2.7Gb/sec. It supports 1490nm transmission for use in passive optical networks (PON). The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.

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Technical Specifications

  Broadcom Inc.
Product Category Diode Lasers
Product Number TO295J149x
Product Name 1.49 µm DFB Chip in TO-can for FTTx Applications
Laser Type Laser Diodes
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