Broadcom Inc. 1.49 µm DFB Chip in TO-can for FTTx Applications TO295J149x

Description
The Avago TO295J149x is an hermetic sealed TO can device with integral photo diode for optical output monitoring using 1490nm single mode edge-emitting laser diode chip for use in uncooled applications up to 2.7Gb/sec. It supports 1490nm transmission for use in passive optical networks (PON). The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.
Description
The Avago TO295J149x is an hermetic sealed TO can device with integral photo diode for optical output monitoring using 1490nm single mode edge-emitting laser diode chip for use in uncooled applications up to 2.7Gb/sec. It supports 1490nm transmission for use in passive optical networks (PON). The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.

Suppliers

Company
Product
Description
Supplier Links
1.49 µm DFB Chip in TO-can for FTTx Applications - TO295J149x - Broadcom Inc.
San Jose, CA, USA
1.49 µm DFB Chip in TO-can for FTTx Applications
TO295J149x
1.49 µm DFB Chip in TO-can for FTTx Applications TO295J149x
The Avago TO295J149x is an hermetic sealed TO can device with integral photo diode for optical output monitoring using 1490nm single mode edge-emitting laser diode chip for use in uncooled applications up to 2.7Gb/sec. It supports 1490nm transmission for use in passive optical networks (PON). The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.

The Avago TO295J149x is an hermetic sealed TO can device with integral photo diode for optical output monitoring using 1490nm single mode edge-emitting laser diode chip for use in uncooled applications up to 2.7Gb/sec. It supports 1490nm transmission for use in passive optical networks (PON). The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.

Supplier's Site

Technical Specifications

  Broadcom Inc.
Product Category Diode Lasers
Product Number TO295J149x
Product Name 1.49 µm DFB Chip in TO-can for FTTx Applications
Laser Type Laser Diodes
Unlock Full Specs
to access all available technical data

Similar Products

Laser Diode & Light Fiber for LTT - LASER DIODE SPL-PL90 A - Infineon Technologies AG
Specs
Laser Type Laser Diodes
View Details
Pulsed laser diodes (PLD) - L11854-307-05 - Hamamatsu Photonics
Specs
Laser Type Laser Diodes
Laser Output Pulsed
Wavelength Range 895 to 915 nm (8950 to 9150 Å)
View Details
Ushio Laser Diodes - HL65293HD - World Star Tech
Specs
Laser Type Laser Diodes; Laser Diode Modules
Wavelength Range 652 nm (6520 Å)
Laser Power 1300 milliwatts
View Details
660/780nm Two-Wavelength Laser Diode - RLD2WMNL2-01x - ROHM Semiconductor USA, LLC
Specs
Laser Type Laser Diodes
Wavelength Range 658 to 770 nm (6580 to 7700 Å)
Operating Current 20 to 24 milliamps
View Details