Broadcom Inc. 10Gb/s CWDM (1470-1610nm) DFB TO Can TO295J-1xxT

Description
The Avago TO295J-1xxT is a hermetically sealed 10Gb/s coarse wavelength division multiplexing (CWDM) distributed-feedback (DFB) TO-Can device with a photo diode for optical output monitoring. The device incorporates 1470nm~1610nm single mode edge-emitting laser diode chips for use in uncooled applications with data rates up to 10.7 Gb/s. The laser is mounted into a TO header and hermetically sealed with a specific lens cap. The laser design is a buried heterostructure with multi-quantum well (MQW) active layers and DFB grating layer. All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in and other multi-temperature, CW and dynamic tests.
Description
The Avago TO295J-1xxT is a hermetically sealed 10Gb/s coarse wavelength division multiplexing (CWDM) distributed-feedback (DFB) TO-Can device with a photo diode for optical output monitoring. The device incorporates 1470nm~1610nm single mode edge-emitting laser diode chips for use in uncooled applications with data rates up to 10.7 Gb/s. The laser is mounted into a TO header and hermetically sealed with a specific lens cap. The laser design is a buried heterostructure with multi-quantum well (MQW) active layers and DFB grating layer. All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in and other multi-temperature, CW and dynamic tests.

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10Gb/s CWDM (1470-1610nm) DFB TO Can - TO295J-1xxT - Broadcom Inc.
San Jose, CA, USA
10Gb/s CWDM (1470-1610nm) DFB TO Can
TO295J-1xxT
10Gb/s CWDM (1470-1610nm) DFB TO Can TO295J-1xxT
The Avago TO295J-1xxT is a hermetically sealed 10Gb/s coarse wavelength division multiplexing (CWDM) distributed-feedback (DFB) TO-Can device with a photo diode for optical output monitoring. The device incorporates 1470nm~1610nm single mode edge-emitting laser diode chips for use in uncooled applications with data rates up to 10.7 Gb/s. The laser is mounted into a TO header and hermetically sealed with a specific lens cap. The laser design is a buried heterostructure with multi-quantum well (MQW) active layers and DFB grating layer. All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in and other multi-temperature, CW and dynamic tests.

The Avago TO295J-1xxT is a hermetically sealed 10Gb/s coarse wavelength division multiplexing (CWDM) distributed-feedback (DFB) TO-Can device with a photo diode for optical output monitoring. The device incorporates 1470nm~1610nm single mode edge-emitting laser diode chips for use in uncooled applications with data rates up to 10.7 Gb/s. The laser is mounted into a TO header and hermetically sealed with a specific lens cap. The laser design is a buried heterostructure with multi-quantum well (MQW) active layers and DFB grating layer. All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in and other multi-temperature, CW and dynamic tests.

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Technical Specifications

  Broadcom Inc.
Product Category Diode Lasers
Product Number TO295J-1xxT
Product Name 10Gb/s CWDM (1470-1610nm) DFB TO Can
Laser Type Laser Diodes
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