Broadcom Inc. 1.3 µm DFB Chip in TO Can for Wide-Temperature 10Gb/s Uncooled Applications up to 20km TO293K

Description
The Avago TO293K is an hermetic sealed TO can device with a photo diode for optical output monitoring using 1310nm single mode edge-emitting laser diode chip for use in uncooled applications up to 10.7Gb/sec. The laser is mounted into a TO header and hermetic sealed with a specific lens cap. The laser design is a Ridge Waveguide on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer.
  • 1.3 µm DFB Chip in TO Can for Wide-Temperature 10Gb/s Uncooled Applications up to 20km - TO293K - Broadcom Inc.
    Broadcom Inc.
Description
The Avago TO293K is an hermetic sealed TO can device with a photo diode for optical output monitoring using 1310nm single mode edge-emitting laser diode chip for use in uncooled applications up to 10.7Gb/sec. The laser is mounted into a TO header and hermetic sealed with a specific lens cap. The laser design is a Ridge Waveguide on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer.

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1.3 µm DFB Chip in TO Can for Wide-Temperature 10Gb/s Uncooled Applications up to 20km - TO293K - Broadcom Inc.
Broadcom Inc.
San Jose, CA, USA
1.3 µm DFB Chip in TO Can for Wide-Temperature 10Gb/s Uncooled Applications up to 20km
TO293K
1.3 µm DFB Chip in TO Can for Wide-Temperature 10Gb/s Uncooled Applications up to 20km TO293K
The Avago TO293K is an hermetic sealed TO can device with a photo diode for optical output monitoring using 1310nm single mode edge-emitting laser diode chip for use in uncooled applications up to 10.7Gb/sec. The laser is mounted into a TO header and hermetic sealed with a specific lens cap. The laser design is a Ridge Waveguide on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer.

The Avago TO293K is an hermetic sealed TO can device with a photo diode for optical output monitoring using 1310nm single mode edge-emitting laser diode chip for use in uncooled applications up to 10.7Gb/sec. The laser is mounted into a TO header and hermetic sealed with a specific lens cap. The laser design is a Ridge Waveguide on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer.

Supplier's Site

Technical Specifications

  Broadcom Inc.
Product Category Diode Lasers
Product Number TO293K
Product Name 1.3 µm DFB Chip in TO Can for Wide-Temperature 10Gb/s Uncooled Applications up to 20km
Laser Type Laser Diodes
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