Overview of HL67231DG Laser Diode
HL67231DG is a high-performance red laser diode developed by Ushio, featuring a wavelength of 671 nm and an optical output power of 210 mW. It is equipped with an anti-reflection (AR) coated front facet, achieving a target reflectivity of 0.1% at 671 nm, which enhances its efficiency and stability. Designed for demanding applications, it operates effectively at temperatures up to +75°C.
Key Features:
Wavelength: 671 nm
Optical Output Power: 210 mW
Threshold Current: 60 mA
Operating Current: 240 mA at 200 mW
Operating Voltage: 2.7 V at 200 mW
Beam Divergence: Parallel to junction: 8° (FWHM); Perpendicular to junction: 15° (FWHM)
Operating Temperature: -10°C to +75°C
Storage Temperature: -40°C to +85°C
Package Type: Flanged
Polarization: Transverse electric (TE) mode oscillation Applications:
External Cavity Diode Lasers (ECDLs): Used in tunable laser source instruments
Optical Equipment: Serves as a stable light source in various optical devices
Overview of HL67231DG Laser Diode
HL67231DG is a high-performance red laser diode developed by Ushio, featuring a wavelength of 671 nm and an optical output power of 210 mW. It is equipped with an anti-reflection (AR) coated front facet, achieving a target reflectivity of 0.1% at 671 nm, which enhances its efficiency and stability. Designed for demanding applications, it operates effectively at temperatures up to +75°C.
Key Features:
- Wavelength: 671 nm
- Optical Output Power: 210 mW
- Threshold Current: 60 mA
- Operating Current: 240 mA at 200 mW
- Operating Voltage: 2.7 V at 200 mW
- Beam Divergence: Parallel to junction: 8° (FWHM); Perpendicular to junction: 15° (FWHM)
- Operating Temperature: -10°C to +75°C
- Storage Temperature: -40°C to +85°C
- Package Type: Flanged
- Polarization: Transverse electric (TE) mode oscillation Applications:
- External Cavity Diode Lasers (ECDLs): Used in tunable laser source instruments
- Optical Equipment: Serves as a stable light source in various optical devices
