Broadcom Inc. 1.3 µm DFB Chip in TO-can for Uncooled Applications TO293Bx

Description
The Avago TO293Bx is an hermetically sealed TO can device with integral photo diode for optical output monitoring using a 1310nm single mode edge-emitting laser diode chip family for use in uncooled applications up to 2.7Gb/sec. The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried heterostructure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.
Description
The Avago TO293Bx is an hermetically sealed TO can device with integral photo diode for optical output monitoring using a 1310nm single mode edge-emitting laser diode chip family for use in uncooled applications up to 2.7Gb/sec. The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried heterostructure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.

Suppliers

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Description
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1.3 µm DFB Chip in TO-can for Uncooled Applications - TO293Bx - Broadcom Inc.
San Jose, CA, USA
1.3 µm DFB Chip in TO-can for Uncooled Applications
TO293Bx
1.3 µm DFB Chip in TO-can for Uncooled Applications TO293Bx
The Avago TO293Bx is an hermetically sealed TO can device with integral photo diode for optical output monitoring using a 1310nm single mode edge-emitting laser diode chip family for use in uncooled applications up to 2.7Gb/sec. The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried heterostructure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.

The Avago TO293Bx is an hermetically sealed TO can device with integral photo diode for optical output monitoring using a 1310nm single mode edge-emitting laser diode chip family for use in uncooled applications up to 2.7Gb/sec. The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap.

The laser design is a capped mesa buried heterostructure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.

Supplier's Site

Technical Specifications

  Broadcom Inc.
Product Category Diode Lasers
Product Number TO293Bx
Product Name 1.3 µm DFB Chip in TO-can for Uncooled Applications
Laser Type Laser Diodes
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