Broadcom Inc. TO293 CWDM Series 1270nm to 1450nm DFB TO-Can Package for 10Gb/s Applications TO293B1xxT

Description
The TO293 CWDM is a hermetically sealed device with a photo diode for optical output monitoring. It incorporates 1270nm to 1450nm single mode edge-emitting laser diode chips for use in uncooled applications up to 10.7Gb/sec. The laser is mounted into a TO header and is hermetically sealed with a specific lens cap. The laser design is buried hetero structure with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in and other multi-temperature, CW and dynamic tests.
Description
The TO293 CWDM is a hermetically sealed device with a photo diode for optical output monitoring. It incorporates 1270nm to 1450nm single mode edge-emitting laser diode chips for use in uncooled applications up to 10.7Gb/sec. The laser is mounted into a TO header and is hermetically sealed with a specific lens cap. The laser design is buried hetero structure with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in and other multi-temperature, CW and dynamic tests.

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TO293 CWDM Series 1270nm to 1450nm DFB TO-Can Package for 10Gb/s Applications - TO293B1xxT - Broadcom Inc.
San Jose, CA, USA
TO293 CWDM Series 1270nm to 1450nm DFB TO-Can Package for 10Gb/s Applications
TO293B1xxT
TO293 CWDM Series 1270nm to 1450nm DFB TO-Can Package for 10Gb/s Applications TO293B1xxT
The TO293 CWDM is a hermetically sealed device with a photo diode for optical output monitoring. It incorporates 1270nm to 1450nm single mode edge-emitting laser diode chips for use in uncooled applications up to 10.7Gb/sec. The laser is mounted into a TO header and is hermetically sealed with a specific lens cap. The laser design is buried hetero structure with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in and other multi-temperature, CW and dynamic tests.

The TO293 CWDM is a hermetically sealed device with a photo diode for optical output monitoring. It incorporates 1270nm to 1450nm single mode edge-emitting laser diode chips for use in uncooled applications up to 10.7Gb/sec.

The laser is mounted into a TO header and is hermetically sealed with a specific lens cap. The laser design is buried hetero structure with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in and other multi-temperature, CW and dynamic tests.

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Technical Specifications

  Broadcom Inc.
Product Category Diode Lasers
Product Number TO293B1xxT
Product Name TO293 CWDM Series 1270nm to 1450nm DFB TO-Can Package for 10Gb/s Applications
Laser Type Laser Diodes
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