Broadcom Inc. RFFETs - HSCH-5512 HSCH-5512

The HSCH-5512 is a dual beam lead Schottky diode pair designed for use in mixers and detectors in microwave circuits up to K-band. It features a monolithic construction with closely matched electrical parameters, a maximum capacitance of 0.15 pF at 0 V, and a typical noise figure of 7.5 dB at 26 GHz. The diode operates over a temperature range of -65°C to +175°C and withstands a maximum pulse power of 1 W at 25°C with a 1 µs pulse width and 0.001 duty cycle. It is mounted using thermocompression bonding and includes platinum tri-metalization and silicon nitride passivation for high temperature stability and reliability. The device is ESD sensitive and has a minimum lead pull strength of 4 grams. It meets the AEC-Q200 qualification standard.