Born Semiconductor (Shenzhen) Co., Ltd. Semiconductor Power Modules PESD3V3S1BA-N

Description
10A@8/20us 10V 4V 3.3V SOD-523 ESD and Surge Protection (TVS/ESD) ROHS
  • Semiconductor Power Modules - PESD3V3S1BA-N - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
10A@8/20us 10V 4V 3.3V SOD-523 ESD and Surge Protection (TVS/ESD) ROHS

Suppliers

Company
Product
Description
Supplier Links
Semiconductor Power Modules - PESD3V3S1BA-N - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Semiconductor Power Modules
PESD3V3S1BA-N
Semiconductor Power Modules PESD3V3S1BA-N
10A@8/20us 10V 4V 3.3V SOD-523 ESD and Surge Protection (TVS/ESD) ROHS

10A@8/20us 10V 4V 3.3V SOD-523 ESD and Surge Protection (TVS/ESD) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Semiconductor Power Modules
Product Number PESD3V3S1BA-N
Product Name Semiconductor Power Modules
Unlock Full Specs
to access all available technical data

Similar Products

Intelligent Power Modules (IPM) - IM241-L6T2B - Infineon Technologies AG
Infineon Technologies AG
Intelligent Power Modules (IPM)
IM241-L6T2B
Specs
Technology Intelligent Power Module (IPM)
Configuration Three Phase; 3 Phase Open Emitter
Package DIP 29x12
View Details
IGBT Modules 2-Pack - 6th-Gen V Series Model 2MBI650VXA-170E-50 - Fuji Electric Corp. of America
Fuji Electric Corp. of America
IGBT Modules 2-Pack
6th-Gen V Series Model 2MBI650VXA-170E-50
Specs
Technology IGBT
Package M271
Output Voltage 1700 volts
View Details
flow PHASE 0 + NTC Power Module - 10-PZ122PB100SH-M819F28Y - Vincotech GmbH
Vincotech GmbH
flow PHASE 0 + NTC Power Module
10-PZ122PB100SH-M819F28Y
Specs
Technology IGBT; IGBT4 HS
Configuration Half-Bridge
Output Voltage 1200 volts
View Details
Full Silicon Carbide Power Modules - - Semikron, Inc.
Semikron, Inc.
Full Silicon Carbide Power Modules
Specs
Technology SiC
Configuration Half-Bridge; H-Bridge; Six-Pack
Output Voltage 1200 to 1700 volts
View Details