NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN005-25D PSMN005-25D

Description
Manufacturer: NXP Win Source Part Number: 045955-PSMN005-25D Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 60nC @ 5V Max Input Capacitance: 3500pF @ 20V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 5.8 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
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Description
Manufacturer: NXP Win Source Part Number: 045955-PSMN005-25D Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 60nC @ 5V Max Input Capacitance: 3500pF @ 20V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 5.8 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN005-25D - 045955-PSMN005-25D - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN005-25D
045955-PSMN005-25D
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN005-25D 045955-PSMN005-25D
Manufacturer: NXP Win Source Part Number: 045955-PSMN005-25D Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 60nC @ 5V Max Input Capacitance: 3500pF @ 20V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 5.8 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: NXP
Win Source Part Number: 045955-PSMN005-25D
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 60nC @ 5V
Max Input Capacitance: 3500pF @ 20V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 5.8 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 045955-PSMN005-25D
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN005-25D
Polarity N-Channel; N-Channel
V(BR)DSS 25 volts
PD 125000 milliwatts
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