NPN/PNP resistor-equipped transistors with built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ) in a DFN1010B-6 (SOT1216) leadless package measuring 1.1 mm × 1 mm × 0.37 mm. Each transistor supports a maximum collector current of 100 mA and collector-emitter voltage of 50 V. The device is AEC-Q101 qualified and designed for low-current peripheral driving and IC input control in mobile and digital applications.
NPN/PNP resistor-equipped transistors
| Rochester Electronics | |
|---|---|
| Product Category | RF Transistors |
| Product Number | PQMD3147 |
| Polarity | NPN; PNP |
