NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV37EN2R PMV37EN2R

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 004420-PMV37EN2R Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 510mW (Ta), 5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.5A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6.3nC @ 10V Max Input Capacitance: 209pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 36 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 004420-PMV37EN2R Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 510mW (Ta), 5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.5A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6.3nC @ 10V Max Input Capacitance: 209pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 36 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV37EN2R - 004420-PMV37EN2R - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV37EN2R
004420-PMV37EN2R
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV37EN2R 004420-PMV37EN2R
Manufacturer: Nexperia USA Inc. Win Source Part Number: 004420-PMV37EN2R Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 510mW (Ta), 5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.5A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6.3nC @ 10V Max Input Capacitance: 209pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 36 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 004420-PMV37EN2R
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 510mW (Ta), 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.5A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 6.3nC @ 10V
Max Input Capacitance: 209pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 36 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 004420-PMV37EN2R
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV37EN2R
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 510 to 5000 milliwatts
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