CSD17577Q3A 8-VSONP -40 to 85
30V, N ch NexFET MOSFET™, single SON3x3, 6.4mOhm 8-VSONP -55 to 150 Product overview: CSD17577Q3AT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.4mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.4mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD17577Q3AT can be used for catalog matching and distributor lookup.
N-Channel 30V 35A (Ta) 2.8W (Ta), 53W (Tc) Surface Mount 8-VSONP (3x3.3)
N-Channel 30V 35A (Ta) 2.8W (Ta), 53W (Tc) Surface Mount 8-VSONP (3x3.3)
N-Channel 30V 35A (Ta) 2.8W (Ta), 53W (Tc) Surface Mount 8-VSONP (3x3.3)
Manufacturer: Texas Instruments
Win Source Part Number: 1030615-CSD17577Q3AT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 53W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSONP (3x3.15)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 35A (Ta)
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 2310pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.8 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
MOSFET N-CH 30V 35A 8VSON
MOSFET N-CH 30V 35A 8VSON
MOSFET, N CH, 30V, 35A, VSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V; Power DissipationRoHS Compliant: Yes
| Texas Instruments | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD17577Q3AT | 278-CSD17577Q3AT | 296-38336-2-ND | 1030615-CSD17577Q3AT | CSD17577Q3AT | CSD17577Q3AT | 28AH2093 | CSD17577Q3AT |
| Product Name | CSD17577Q3A CSD17577Q3A | 30V 6.4mOhm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD17577Q3AT | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Ch, 30V, 35A, Vson-8; Transistor Polarity Texas Instruments | MOSFET |
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| IDSS | 239000 milliamps | 35000 milliamps | 35000 milliamps | |||||
| VGS(off) | 20 volts | |||||||
| rDS(on) | 0.0064 ohms | 0.0040 ohms | ||||||
| Package Type | SON3x3 | 8-PowerVDFN | SOT3; 8-VSONP (3x3.15) | 8-PowerVDFN | 8-PowerVDFN | TO-3 |
