NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV30UN2R PMV30UN2R

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 004416-PMV30UN2R Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 490mW (Ta), 5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.2A (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 11nC @ 4.5V Max Input Capacitance: 655pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 32 mOhm @ 4.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 004416-PMV30UN2R Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 490mW (Ta), 5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.2A (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 11nC @ 4.5V Max Input Capacitance: 655pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 32 mOhm @ 4.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV30UN2R - 004416-PMV30UN2R - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV30UN2R
004416-PMV30UN2R
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV30UN2R 004416-PMV30UN2R
Manufacturer: Nexperia USA Inc. Win Source Part Number: 004416-PMV30UN2R Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 490mW (Ta), 5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.2A (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 11nC @ 4.5V Max Input Capacitance: 655pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 32 mOhm @ 4.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 004416-PMV30UN2R
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 490mW (Ta), 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.2A (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 11nC @ 4.5V
Max Input Capacitance: 655pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 32 mOhm @ 4.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 004416-PMV30UN2R
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV30UN2R
Polarity N-Channel; N-Channel
V(BR)DSS 20 volts
PD 490 to 5000 milliwatts
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