NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMDPB58UPE,115 PMDPB58UPE,115

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 004392-PMDPB58UPE,11 5 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DFN2020-6 Maximum Power Dissipation: 515mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.6A Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 9.5nC @ 4.5V Max Input Capacitance: 804pF @ 10V Maximum Rds On at Id,Vgs: 67 mOhm @ 2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMDPB58UPE,115 - 004392-PMDPB58UPE,115 - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 004392-PMDPB58UPE,11 5 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DFN2020-6 Maximum Power Dissipation: 515mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.6A Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 9.5nC @ 4.5V Max Input Capacitance: 804pF @ 10V Maximum Rds On at Id,Vgs: 67 mOhm @ 2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMDPB58UPE,115 - 004392-PMDPB58UPE,115 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMDPB58UPE,115
004392-PMDPB58UPE,115
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMDPB58UPE,115 004392-PMDPB58UPE,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 004392-PMDPB58UPE,11 5 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DFN2020-6 Maximum Power Dissipation: 515mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.6A Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 9.5nC @ 4.5V Max Input Capacitance: 804pF @ 10V Maximum Rds On at Id,Vgs: 67 mOhm @ 2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 004392-PMDPB58UPE,115
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DFN2020-6
Maximum Power Dissipation: 515mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.6A
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 9.5nC @ 4.5V
Max Input Capacitance: 804pF @ 10V
Maximum Rds On at Id,Vgs: 67 mOhm @ 2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 004392-PMDPB58UPE,115
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMDPB58UPE,115
Polarity P-Channel
V(BR)DSS 20 volts
PD 515 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

CSD17483F4 30V, N-Channel FemtoFET?MOSFET - CSD17483F4 - Texas Instruments
Texas Instruments
CSD17483F4 30V, N-Channel FemtoFET?MOSFET
CSD17483F4
Specs
Polarity N-Channel
V(BR)DSS 30 volts
IDSS 5000 milliamps
View Details
7 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMCQ120R160M1T - AIMCQ120R160M1T - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMCQ120R160M1T
AIMCQ120R160M1T
Specs
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
TJ -55 to 175 C (-67 to 347 F)
View Details
MOSFETs - 1827255P - RS Components, Ltd.
RS Components, Ltd.
MOSFETs
1827255P
Specs
Package Type TO-252 (DPAK); TO-252
View Details
N-channel 40 V, 21 mΩ standard level MOSFET in LFPAK56 - BUK7Y21-40EX - Nexperia B.V.
Nexperia B.V.
N-channel 40 V, 21 mΩ standard level MOSFET in LFPAK56
BUK7Y21-40EX
Specs
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts
IDSS 33000 milliamps
View Details
8 suppliers