NXP Semiconductors Single FETs, MOSFETs BUK9E15-60E,127

BUK9E15-60E is an N-channel TrenchMOS logic level MOSFET designed for automotive power switching applications, housed in an I2PAK (SOT226) package. It has a drain-source voltage rating of 60 V, a continuous drain current of 54 A at 25 °C, and a total power dissipation of 96 W at 25 °C. The device features a drain-source on-state resistance of 11.6 mΩ at 15 A and 5 V gate-source voltage, and operates with a junction temperature up to 175 °C. It is AEC-Q101 qualified and supports repetitive avalanche operation with a non-repetitive avalanche energy rating of 40.5 mJ. The gate-source threshold voltage is specified as greater than 0.5 V at 175 °C, enabling true logic level operation.