NXP Semiconductors Single FETs, MOSFETs BUK958R5-40E,127

Description
N-Channel 40V 75A (Tc) 96W (Tc) Through Hole TO-220AB
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Description
N-Channel 40V 75A (Tc) 96W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 568-9867-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
568-9867-5-ND
Single FETs, MOSFETs 568-9867-5-ND
N-Channel 40V 75A (Tc) 96W (Tc) Through Hole TO-220AB

N-Channel 40V 75A (Tc) 96W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1314668-BUK958R5-40E,127 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1314668-BUK958R5-40E,127
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1314668-BUK958R5-40E,127
Win Source Part Number: 1314668-BUK958R5-40E ,127 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchMOS™ Package: Tube Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 96W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V Vgs (Max): ±10V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 85 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: NXP USA Inc. Base Product Number: BUK95 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V

Win Source Part Number: 1314668-BUK958R5-40E,127
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchMOS™
Package: Tube
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 96W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Vgs (Max): ±10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 85 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: NXP USA Inc.
Base Product Number: BUK95
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V

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 - BUK958R5-40E,127 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, SIL3P

Power Field-Effect Transistor, SIL3P

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics
Product Category Transistors Transistors Power MOSFET
Product Number 568-9867-5-ND 1314668-BUK958R5-40E,127 BUK958R5-40E,127
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Polarity N-Channel N-Channel
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