MOSFET N-CH 100V 190MA SOT-23 Product overview: BST82 from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 190MA, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 190MA, SOT-23, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BST82 can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 83497-BST82
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 830mW (Tc)
Family Name: BST82
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 190mA (Ta)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Input Capacitance: 40pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 Ohm @ 150mA, 5V
Alternative Parts (Cross-Reference): BST82 T1; BST82T; BST82,235;
Introduction Date: October 31, 1990
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 285-BST82 | 83497-BST82 |
| Product Name | 100V 190MA SOT-23 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BST82 |
| Polarity | N-Channel | N-Channel; N-Channel |
| PD | 830 milliwatts | 830 milliwatts |
| TJ | -65 to 150 C (-85 to 302 F) | -65 to 150 C (-85 to 302 F) |