NXP Semiconductors France SAS TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH205G2R BSH205G2R

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 099034-BSH205G2R Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 480mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2A (Ta) Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 6.5nC @ 4.5V Max Input Capacitance: 418pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 170 mOhm @ 2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 099034-BSH205G2R Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 480mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2A (Ta) Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 6.5nC @ 4.5V Max Input Capacitance: 418pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 170 mOhm @ 2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH205G2R - 099034-BSH205G2R - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH205G2R
099034-BSH205G2R
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH205G2R 099034-BSH205G2R
Manufacturer: Nexperia USA Inc. Win Source Part Number: 099034-BSH205G2R Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 480mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2A (Ta) Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 6.5nC @ 4.5V Max Input Capacitance: 418pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 170 mOhm @ 2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 099034-BSH205G2R
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 480mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2A (Ta)
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 6.5nC @ 4.5V
Max Input Capacitance: 418pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 170 mOhm @ 2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 099034-BSH205G2R
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH205G2R
Polarity P-Channel; P-Channel
V(BR)DSS 20 volts
PD 480 milliwatts
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