NXP Semiconductors TRANSISTORS - RF Transistors (BJT) - BFG520W,115 BFG520W,115

Manufacturer: NXP
Win Source Part Number: 1023225-BFG520W,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 9GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.1dB to 2.1dB @ 900MHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 175°C (TJ)
Case / Package: 4-SO
Maximum Current Collector: 70mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
Typical Gain (hFE) (Min): 60 @ 20mA, 6V
Maximum Power Dissipation: 500mW
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient

RF TRANS NPN 15V 9GHZ 4SO Product overview: BFG520W,115 from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15V, 9GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 15V, 9GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG520W,115 can be used for catalog matching and distributor lookup.

RF Transistor NPN 15V 70mA 9GHz 500mW Surface Mount 4-SO