NXP Semiconductors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single BF820,235

Description
Win Source Part Number: 1278652-BF820,235 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Series: Automotive, AEC-Q101 Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 50 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V Frequency - Transition: 60MHz Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 66 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: NXP Semiconductors Other Names: 2156-BF820,235-954
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Description
Win Source Part Number: 1278652-BF820,235 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Series: Automotive, AEC-Q101 Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 50 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V Frequency - Transition: 60MHz Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 66 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: NXP Semiconductors Other Names: 2156-BF820,235-954
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Datasheet
Datasheet Summary
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NPN high-voltage transistor in a SOT23 surface-mounted package, rated for a collector-emitter voltage of 300 V and a maximum collector current of 50 mA. It has a DC current gain (hFE) of at least 50 at 25 mA and 20 V, a collector-emitter saturation voltage of 600 mV at 5 mA base and 30 mA collector current, and a transition frequency of 60 MHz. The device dissipates up to 250 mW with a junction temperature rating of 150°C and a thermal resistance of 500 K/W when mounted on an FR4 PCB.

Datasheet Summary
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NPN high-voltage transistor in a SOT23 surface-mounted package, rated for a collector-emitter voltage of 300 V and a maximum collector current of 50 mA. It has a DC current gain (hFE) of at least 50 at 25 mA and 20 V, a collector-emitter saturation voltage of 600 mV at 5 mA base and 30 mA collector current, and a transition frequency of 60 MHz. The device dissipates up to 250 mW with a junction temperature rating of 150°C and a thermal resistance of 500 K/W when mounted on an FR4 PCB.

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1278652-BF820,235 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1278652-BF820,235
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1278652-BF820,235
Win Source Part Number: 1278652-BF820,235 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Series: Automotive, AEC-Q101 Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 50 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V Frequency - Transition: 60MHz Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 66 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: NXP Semiconductors Other Names: 2156-BF820,235-954

Win Source Part Number: 1278652-BF820,235
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Series: Automotive, AEC-Q101
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 50 mA
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Frequency - Transition: 60MHz
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: NXP Semiconductors
Other Names: 2156-BF820,235-954

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1278652-BF820,235
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
Polarity NPN
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