UTC Transistors MMBT4401G-AE3-R

Description
40V 350mW 100@150mA,1V 600mA NPN SOT-23 Bipolar (BJT) ROHS
Description
40V 350mW 100@150mA,1V 600mA NPN SOT-23 Bipolar (BJT) ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors MMBT4401G-AE3-R
40V 350mW 100@150mA,1V 600mA NPN SOT-23 Bipolar (BJT) ROHS

40V 350mW 100@150mA,1V 600mA NPN SOT-23 Bipolar (BJT) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number MMBT4401G-AE3-R
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMCQ120R060M1T - AIMCQ120R060M1T - Infineon Technologies AG
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
QUAD/DUAL N-CHANNEL ZERO THRESHOLD™ EPAD® PRECISION MATCHED PAIR MOSFET ARRAY - ALD110800APCL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type PDIP16
View Details
4 suppliers
DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT - TGF2023-2-02 - Qorvo
Specs
Transistor Type HEMT
Transistor Technology / Material GaN on SiC
Package Type Die
View Details
4 suppliers