Richardson RFPD RF and Microwave Switch HMC784AMS8GE

Description
The HMC784AMS8GE is a high power SPDT switch in an 8-lead MSOPG package for use in transmit-receive applications which require very low distortion at high input signal power levels. The device can control signals from DC to 4 GHz. The design provides exceptional intermodulation performance; > +60 dBm third order intercept at +5V bias. RF1 and RF2 are reflective shorts when “OFF”. On-chip circuitry allows single positive supply operation from +3 Vdc to +8 Vdc at very low DC current with control inputs compatible with CMOS logic families.
Request a Quote Datasheet
Description
The HMC784AMS8GE is a high power SPDT switch in an 8-lead MSOPG package for use in transmit-receive applications which require very low distortion at high input signal power levels. The device can control signals from DC to 4 GHz. The design provides exceptional intermodulation performance; > +60 dBm third order intercept at +5V bias. RF1 and RF2 are reflective shorts when “OFF”. On-chip circuitry allows single positive supply operation from +3 Vdc to +8 Vdc at very low DC current with control inputs compatible with CMOS logic families.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF and Microwave Switch - HMC784AMS8GE - Richardson RFPD
Downers Grove, IL, United States
RF and Microwave Switch
HMC784AMS8GE
RF and Microwave Switch HMC784AMS8GE
The HMC784AMS8GE is a high power SPDT switch in an 8-lead MSOPG package for use in transmit-receive applications which require very low distortion at high input signal power levels. The device can control signals from DC to 4 GHz. The design provides exceptional intermodulation performance; > +60 dBm third order intercept at +5V bias. RF1 and RF2 are reflective shorts when “OFF”. On-chip circuitry allows single positive supply operation from +3 Vdc to +8 Vdc at very low DC current with control inputs compatible with CMOS logic families.

The HMC784AMS8GE is a high power SPDT switch in an 8-lead MSOPG package for use in transmit-receive applications which require very low distortion at high input signal power levels. The device can control signals from DC to 4 GHz. The design provides exceptional intermodulation performance; > +60 dBm third order intercept at +5V bias. RF1 and RF2 are reflective shorts when “OFF”. On-chip circuitry allows single positive supply operation from +3 Vdc to +8 Vdc at very low DC current with control inputs compatible with CMOS logic families.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Switches
Product Number HMC784AMS8GE
Product Name RF and Microwave Switch
Package Type MSOP8G
Frequency Range 0.0 to 4000 MHz
Insertion Loss 1.3 dB
Unlock Full Specs
to access all available technical data

Similar Products

RF and Microwave Switch - AS183-92LF - Richardson RFPD
Specs
Package Type SC-70
Frequency Range 0.3000 to 2500 MHz
Insertion Loss 0.3000 dB
View Details
RF and Microwave Switch - ADRF5047BCCZN - Richardson RFPD
Specs
Package Type LGA
Frequency Range 0.0090 to 44000 MHz
Insertion Loss 2.2 dB
View Details
RF and Microwave Switch - ADRF5042BCCZN-R7 - Richardson RFPD
Specs
Package Type LGA
Frequency Range 100 to 44000 MHz
Insertion Loss 2.5 dB
View Details
RF and Microwave Switch - ADRF5019BCPZN - Richardson RFPD
Specs
Package Type LFCSP
Frequency Range 100 to 13000 MHz
Insertion Loss 0.8000 dB
View Details