The GRF0020 is a 30 W (P3dB) unmatched discrete GaN-on-SiC HEMT power transistor operating from DC to 7 GHz with a 50 V drain supply. It delivers a saturated output power of 45.1 dBm, a saturated gain of 13.5 dB, and a saturated drain efficiency of 51%. The device is housed in a 3 x 3 mm QFN-16 surface mount package and is lead-free and RoHS compliant. It supports both pulsed and linear applications for use in cellular infrastructure, radar, communications, and test instrumentation.
The GRF0020 is a 30W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 7.0GHz on a 50V supply rail. The wide bandwidth of the GRF0020 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both linear and pulse operations. The device is housed in an industry-standard 3x3 mm surface mount QFN-16 package. Lead-free and RoHS compliant.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | GRF0020 |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
