Richardson RFPD RF & MW Power Amplifier CMPA0527005F

Description
CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at the output. This device operates from a 50 V rail and is intended to be used as a predriver from 500 MHz to 2700 MHz. The transistor is available in a 6 leaded flange package.
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Description
CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at the output. This device operates from a 50 V rail and is intended to be used as a predriver from 500 MHz to 2700 MHz. The transistor is available in a 6 leaded flange package.
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RF & MW Power Amplifier - CMPA0527005F - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
CMPA0527005F
RF & MW Power Amplifier CMPA0527005F
CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at the output. This device operates from a 50 V rail and is intended to be used as a predriver from 500 MHz to 2700 MHz. The transistor is available in a 6 leaded flange package.

CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at the output. This device operates from a 50 V rail and is intended to be used as a predriver from 500 MHz to 2700 MHz. The transistor is available in a 6 leaded flange package.

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number CMPA0527005F
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
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