Richardson RFPD RF & MW LNA CHA3656-QAG/20

Description
5.8-17 GHz Low Noise Amplifier. GaAs Monolithic Microwave IC in SMD leadless package. The CHA3656-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package.
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Description
5.8-17 GHz Low Noise Amplifier. GaAs Monolithic Microwave IC in SMD leadless package. The CHA3656-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package.
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Suppliers

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RF & MW LNA - CHA3656-QAG/20 - Richardson RFPD
Downers Grove, IL, United States
RF & MW LNA
CHA3656-QAG/20
RF & MW LNA CHA3656-QAG/20
5.8-17 GHz Low Noise Amplifier. GaAs Monolithic Microwave IC in SMD leadless package. The CHA3656-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package.

5.8-17 GHz Low Noise Amplifier. GaAs Monolithic Microwave IC in SMD leadless package. The CHA3656-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package.

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number CHA3656-QAG/20
Product Name RF & MW LNA
Amplifier Type Low Noise Amplifier
Frequency Range 5800 to 17000 MHz
Maximum Gain 20 dB
Output Power 14 dBm
Noise Figure 1.7 dB
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