Richardson RFPD RF & MW Power Amplifier CHA7060-QAB/20

Description
The CHA7060-QAB is a two stages monolithic GaN High Power Amplifier, reaching 12 Watt output power over 5.6-8.5GHz bandwidth. It offers high linearity performance with 30dB of Gain and an EVM of 33dB at 34dBm average Pout (56MHz modulation bandwidth, 4QAM). It is dedicated to a wide range of applications such as Point-to-Point Radio. The circuit is manufactured on a robust GaN-on-SiC HEMT technology and packaged in a standard surface mount 6x6 plastic QFN which is RoHS compliant. Input and output are 50 Ohm matched and integrate ESD RF protections
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Description
The CHA7060-QAB is a two stages monolithic GaN High Power Amplifier, reaching 12 Watt output power over 5.6-8.5GHz bandwidth. It offers high linearity performance with 30dB of Gain and an EVM of 33dB at 34dBm average Pout (56MHz modulation bandwidth, 4QAM). It is dedicated to a wide range of applications such as Point-to-Point Radio. The circuit is manufactured on a robust GaN-on-SiC HEMT technology and packaged in a standard surface mount 6x6 plastic QFN which is RoHS compliant. Input and output are 50 Ohm matched and integrate ESD RF protections
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Suppliers

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RF & MW Power Amplifier - CHA7060-QAB/20 - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
CHA7060-QAB/20
RF & MW Power Amplifier CHA7060-QAB/20
The CHA7060-QAB is a two stages monolithic GaN High Power Amplifier, reaching 12 Watt output power over 5.6-8.5GHz bandwidth. It offers high linearity performance with 30dB of Gain and an EVM of 33dB at 34dBm average Pout (56MHz modulation bandwidth, 4QAM). It is dedicated to a wide range of applications such as Point-to-Point Radio. The circuit is manufactured on a robust GaN-on-SiC HEMT technology and packaged in a standard surface mount 6x6 plastic QFN which is RoHS compliant. Input and output are 50 Ohm matched and integrate ESD RF protections

The CHA7060-QAB is a two stages monolithic GaN High Power Amplifier, reaching 12 Watt output power over 5.6-8.5GHz bandwidth.

It offers high linearity performance with 30dB of Gain and an EVM of 33dB at 34dBm average Pout (56MHz modulation bandwidth, 4QAM).

It is dedicated to a wide range of applications such as Point-to-Point Radio.

The circuit is manufactured on a robust GaN-on-SiC HEMT technology and packaged in a standard surface mount 6x6 plastic QFN which is RoHS compliant. Input and output are 50 Ohm matched and integrate ESD RF protections

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number CHA7060-QAB/20
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
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