Richardson RFPD mmW Power Amplifier CHA6653-QXG

Description
The CHA6653-QXG is a four stage monolithic GaAs high power circuit producing 1.8 Watt output power. It is highly linear, with possible gain control and integrates a power detector. ESD protections are included. It is designed for Point to Point Radio. The circuit is manufactured with a pHEMT process, 0.15um gate length. It is supplied in RoHS compliant SMD package.
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Description
The CHA6653-QXG is a four stage monolithic GaAs high power circuit producing 1.8 Watt output power. It is highly linear, with possible gain control and integrates a power detector. ESD protections are included. It is designed for Point to Point Radio. The circuit is manufactured with a pHEMT process, 0.15um gate length. It is supplied in RoHS compliant SMD package.
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Suppliers

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Product
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mmW Power Amplifier - CHA6653-QXG - Richardson RFPD
Downers Grove, IL, United States
mmW Power Amplifier
CHA6653-QXG
mmW Power Amplifier CHA6653-QXG
The CHA6653-QXG is a four stage monolithic GaAs high power circuit producing 1.8 Watt output power. It is highly linear, with possible gain control and integrates a power detector. ESD protections are included. It is designed for Point to Point Radio. The circuit is manufactured with a pHEMT process, 0.15um gate length. It is supplied in RoHS compliant SMD package.

The CHA6653-QXG is a four stage monolithic GaAs high power circuit producing 1.8 Watt output power. It is highly linear, with possible gain control and integrates a power detector. ESD protections are included.

It is designed for Point to Point Radio. The circuit is manufactured with a pHEMT process, 0.15um gate length. It is supplied in RoHS compliant SMD package.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number CHA6653-QXG
Product Name mmW Power Amplifier
Amplifier Type Power Amplifier
Frequency Range 27000 to 33500 MHz
Maximum Gain 20 dB
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