Richardson RFPD RF & MW Power Amplifier CHA5266-99F/00

Description
10-16GHz Medium Power Amplifier GaAs Monolithic Microwave IC. The CHA5266-99F is a three stage monolithic GaAs Medium Power Amplifier that produces 23dB linear gain and 36dBm OIP3. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25um gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
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Description
10-16GHz Medium Power Amplifier GaAs Monolithic Microwave IC. The CHA5266-99F is a three stage monolithic GaAs Medium Power Amplifier that produces 23dB linear gain and 36dBm OIP3. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25um gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
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Suppliers

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RF & MW Power Amplifier - CHA5266-99F/00 - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
CHA5266-99F/00
RF & MW Power Amplifier CHA5266-99F/00
10-16GHz Medium Power Amplifier GaAs Monolithic Microwave IC. The CHA5266-99F is a three stage monolithic GaAs Medium Power Amplifier that produces 23dB linear gain and 36dBm OIP3. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25um gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.

10-16GHz Medium Power Amplifier GaAs Monolithic Microwave IC. The CHA5266-99F is a three stage monolithic GaAs Medium Power Amplifier that produces 23dB linear gain and 36dBm OIP3. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25um gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number CHA5266-99F/00
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
Frequency Range 10000 to 16000 MHz
Maximum Gain 23 dB
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