Richardson RFPD RF & MW Driver Amplifier CHA5115-99F/00

Description
X-band Medium Power Amplifier. The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 29dBm output power associated to 39% power added efficiency at 3dB gain compression. This device is manufactured using 0.25um Power pHEMT process, including, via holes through the substrate and air bridges. It is available in chip form.
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Description
X-band Medium Power Amplifier. The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 29dBm output power associated to 39% power added efficiency at 3dB gain compression. This device is manufactured using 0.25um Power pHEMT process, including, via holes through the substrate and air bridges. It is available in chip form.
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Suppliers

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RF & MW Driver Amplifier - CHA5115-99F/00 - Richardson RFPD
Downers Grove, IL, United States
RF & MW Driver Amplifier
CHA5115-99F/00
RF & MW Driver Amplifier CHA5115-99F/00
X-band Medium Power Amplifier. The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 29dBm output power associated to 39% power added efficiency at 3dB gain compression. This device is manufactured using 0.25um Power pHEMT process, including, via holes through the substrate and air bridges. It is available in chip form.

X-band Medium Power Amplifier. The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 29dBm output power associated to 39% power added efficiency at 3dB gain compression.

This device is manufactured using 0.25um Power pHEMT process, including, via holes through the substrate and air bridges. It is available in chip form.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number CHA5115-99F/00
Product Name RF & MW Driver Amplifier
Frequency Range 8000 to 12000 MHz
Maximum Gain 25 dB
Output Power 28 dBm
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