Richardson RFPD mmW LNA CHA3689-99F/00

Description
The CHA3689 is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form.
Request a Quote Datasheet
Description
The CHA3689 is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
mmW LNA - CHA3689-99F/00 - Richardson RFPD
Downers Grove, IL, United States
The CHA3689 is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form.

The CHA3689 is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number CHA3689-99F/00
Product Name mmW LNA
Amplifier Type Low Noise Amplifier
Frequency Range 12500 to 30000 MHz
Maximum Gain 26 dB
Output Power 14 dBm
Noise Figure 1.8 dB
Unlock Full Specs
to access all available technical data

Similar Products

RF & MW VGA - ADL6337ACCZB - Richardson RFPD
Specs
Frequency Range 500 to 1000 MHz
Maximum Gain 37.4 dB
Output Power 26.1 dBm
View Details
RF & MW VGA - ADRF6520ACPZ - Richardson RFPD
Specs
Maximum Gain 54 dB
Noise Figure 10.4 dB
Package Type LFCSP
View Details